We will take the example of Silicon in the cubic diamond structure.
POSCAR
cubic diamond
5.5
0.0 0.5 0.5
0.5 0.0 0.5
0.5 0.5 0.0
2
Direct
-0.125 -0.125 -0.130
0.125 0.125 0.130
- Break of symmetry in standard diamond structure: change z position from 0.125 to 0.130.
INCAR
general:
System = diamond Si
START = 0 ; ICHARG=2
ENCUT = 240
ISMEAR = 0; SIGMA = 0.1;
NSW = 10; IBRION = 2
ISIF = 2
EDIFFG = -0.0001
- 10 relaxation steps (NSW=10).
- Conjugate-gradient algorithm (IBRION=2).
- Relaxation only of internal parameters (ISIF=2).
KPOINTS
K-Points
0
Monkhorst Pack
11 11 11
0 0 0
POTCAR
Download the pseudopotential file from this link diamondSirel.tgz
Calculation
/Ni_dos> vasp_std
- Example output after 10 relaxation steps:
POSITION TOTAL-FORCE (eV/Angst)
-----------------------------------------------------------------------------------
4.81253 4.81253 4.81250 -0.000723 -0.000723 -0.000012
0.68747 0.68747 0.68750 0.000723 0.000723 0.000012
-----------------------------------------------------------------------------------
total drift: 0.000000 0.000000 0.000000
Files to watch during relaxations:
- Other important files:
The content of the CONTCAR file
cubic diamond
5.50000000000000
0.0000000000000000 0.5000000000000000 0.5000000000000000
0.5000000000000000 0.0000000000000000 0.5000000000000000
0.5000000000000000 0.5000000000000000 0.0000000000000000
Si
2
Direct
0.8750001520105571 0.8750001520105571 0.8750103324243388
0.1249998479894427 0.1249998479894427 0.1249896675756612
0.00000000E+00 0.00000000E+00 0.00000000E+00
0.00000000E+00 0.00000000E+00 0.00000000E+00
2 Comments
Thank you for this blogspot. May I know how one performs atomic layer deposition simulations after doing structure relaxation of the precursors.
ReplyDeleteSorry to tell you that I am beginner inusing vasp code
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